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IXYA20N65C3

Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263


Manufacturer: IXYS

Manufacturer part number:
IXYA20N65C3
TME Symbol:
IXYA20N65C3

Specification

Manufacturer
IXYS
Type of transistor
IGBT
Technology
GenX3™, Planar, XPT™
Collector-emitter voltage
650V
Collector current
20A
Power dissipation
230W
Case
TO263
Gate-emitter voltage
±20V
Pulsed collector current
105A
Mounting
SMD
Gate charge
30nC
Kind of package
tube
Turn-on time
51ns
Turn-off time
132ns
Gross weight2 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: SMD IGBT transistors IXYS,
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IXYA20N65C3
0 in TME stock
Net price for quantities from 1 pcs - 3.46 USDGross price for quantities from 1 pcs - 3.46 USD
Net price for quantities from 3 pcs - 3.11 USDGross price for quantities from 3 pcs - 3.11 USD
Net price for quantities from 10 pcs - 2.75 USDGross price for quantities from 10 pcs - 2.75 USD
Net price for quantities from 50 pcs - 2.48 USDGross price for quantities from 50 pcs - 2.48 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs