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Manufacturer	IXYS
Type of transistor	IGBT
Technology	GenX3™, Planar, XPT™
Collector-emitter voltage	650V
Collector current	50A
Power dissipation	600W
Case	TO263-2
Gate-emitter voltage	±20V
Pulsed collector current	250A
Mounting	SMD
Gate charge	86nC
Kind of package	tube
Turn-on time	56ns
Turn-off time	145ns

IXYA50N65C3

Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2

Specification