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Product family

MCNA120UI2200TED

Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 2.2kV

Manufacturer: IXYS

Manufacturer part number:
MCNA120UI2200TED
TME Symbol:
MCNA120UI2200TED

Specification

Manufacturer
IXYS
Type of semiconductor module
IGBT
Semiconductor structure
diode/thyristor/IGBT
Topology
3-phase diode-thyristor bridge, boost chopper, NTC thermistor
Max. off-state voltage
2.2kV
Collector current
80A
Case
E2-Pack
Application
Inverter
Electrical mounting
Press-in PCB
Gate-emitter voltage
±20V
Pulsed collector current
150A
Mechanical mounting
screw
Gross weight10 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: IGBT modules IXYS,
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MCNA120UI2200TED
0 in TME stock
Net price for quantities from 1 pcs - 179.63 USDGross price for quantities from 1 pcs - 179.63 USD
Net price for quantities from 3 pcs - 160.30 USDGross price for quantities from 3 pcs - 160.30 USD
Net price for quantities from 6 pcs - 143.25 USDGross price for quantities from 6 pcs - 143.25 USD
No. of pieces (Multiplicity: 1)
Prices quoted include customs duties and tariffs