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Manufacturer | IXYS | |
Type of transistor | N-MOSFET x2 | |
Technology | HiPerFET™, Polar3™ | |
Polarisation | unipolar | |
Drain-source voltage | 500V | |
Drain current | 30A | |
Pulsed drain current | 150A | |
Power dissipation | 320W | |
Case | SMPD | |
Gate-source voltage | ±30V | |
On-state resistance | 0.12Ω | |
Mounting | SMD | |
Gate charge | 96nC | |
Kind of channel | enhancement | |
Reverse recovery time | 250ns |