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Manufacturer	MICROCHIP TECHNOLOGY
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	3.3kV
Drain current	27A
Pulsed drain current	107A
Power dissipation	439W
Case	TO247-4-notch
On-state resistance	106mΩ
Mounting	THT
Gate charge	161nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal
Manufacturer standard package	30pcs.
Family	SMA

MSC080SMA330B4N

Transistor: N-MOSFET; SiC; unipolar; 3.3kV; 27A; Idm: 107A; 439W

Specification

Transfer Multisort Elektronik Sp. z o.o. is an importer of products of this brand