MXP120A080FL-GE3
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 18A; Idm: 58A; 56W
Manufacturer: VISHAY
Manufacturer part number:
MXP120A080FL-GE3
TME Symbol:
MXP120A080FL-GE3
Specification
Manufacturer | VISHAY | |
Type of transistor | N-MOSFET | |
Technology | MaxSiC™, SiC | |
Polarisation | unipolar | |
Drain-source voltage | 1.2kV | |
Drain current | 18A | |
Pulsed drain current | 58A | |
Power dissipation | 56W | |
Case | TO247-4 | |
Gate-source voltage | -5...20V | |
On-state resistance | 0.175Ω | |
Mounting | THT | |
Gate charge | 47.3nC | |
Kind of package | tube | |
Kind of channel | enhancement | |
Features of semiconductor devices | Kelvin terminal |
Gross weight5 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors VISHAY,
* MXP120A080FL-GE3No. of pieces (Multiplicity: 1)
0 in TME stock
Net price for quantities from 1 pcs - 8.90 USDGross price for quantities from 1 pcs - 8.90 USD
Net price for quantities from 3 pcs - 8.28 USDGross price for quantities from 3 pcs - 8.28 USD
Net price for quantities from 5 pcs - 7.81 USDGross price for quantities from 5 pcs - 7.81 USD
Net price for quantities from 10 pcs - 7.71 USDGross price for quantities from 10 pcs - 7.71 USD
Prices quoted include customs duties and tariffs