+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

Quick Buy Favourites
Cart

We would like to inform that on September 6, 2026 at 08:00 AM - 11:00 AM (CEST) some problems with access to the website and online orders may occur. We apologize for any inconvenience.

We've added a new feature that allows you to schedule a meeting with a consultant. You can find it at the following link: Book an online meeting.

No surprise tariffs – what You see is what You pay

Here you will find out more

NCP5111DR2G

IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA


Manufacturer: ONSEMI

Manufacturer part number:
NCP5111DR2G
TME Symbol:
NCP5111DR2G

Specification

Manufacturer
ONSEMI
Type of integrated circuit
driver
Topology
IGBT half-bridge, MOSFET half-bridge
Kind of integrated circuit
gate driver, high-/low-side
Case
SO8
Output current
-500...250mA
Number of channels
2
Mounting
SMD
Operating temperature
-40...125°C
Impulse rise time
160ns
Pulse fall time
75ns
Kind of package
reel, tape
Voltage class
600V
Protection
undervoltage UVP
Supply voltage
  • 10...20V DC
Gross weight0.1 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov

WATCH VIDEO

See other products in this category: MOSFET/IGBT drivers ONSEMI,
*
NCP5111DR2G
0 in TME stock
Net price for quantities from 1 pcs - 1.15 USDGross price for quantities from 1 pcs - 1.15 USD
Net price for quantities from 10 pcs - 0.84 USDGross price for quantities from 10 pcs - 0.84 USD
Net price for quantities from 25 pcs - 0.76 USDGross price for quantities from 25 pcs - 0.76 USD
Net price for quantities from 50 pcs - 0.74 USDGross price for quantities from 50 pcs - 0.74 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs