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Manufacturer	NTE Electronics
Type of transistor	IGBT
Collector-emitter voltage	1.2kV
Collector current	25A
Power dissipation	200W
Case	TO3P
Gate-emitter voltage	±20V
Pulsed collector current	50A
Mounting	THT
Turn-on time	0.4µs
Turn-off time	0.8µs

NTE3323

Transistor: IGBT; 1.2kV; 25A; 200W; TO3P

Specification