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Manufacturer	NTE Electronics
Type of transistor	N-MOSFET
Polarisation	unipolar
Kind of transistor	RF
Drain-source voltage	20V
Drain current	25mA
Power dissipation	0.2W
Gate-source voltage	±10V
Kind of channel	depletion
Features of semiconductor devices	dual gate
Version	ESD

NTE455

Transistor: N-MOSFET; unipolar; RF; 20V; 25mA; 200mW; ESD

Specification