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Manufacturer	ONSEMI
Type of transistor	N-MOSFET x2
Polarisation	unipolar
Drain-source voltage	40V
Drain current	60A
Pulsed drain current	349A
Power dissipation	26W
Case	WQFN12
Gate-source voltage	±20V
On-state resistance	4.5mΩ
Mounting	SMD
Gate charge	18nC
Kind of package	reel, tape
Kind of channel	enhancement

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Transistor: N-MOSFET x2; unipolar; 40V; 60A; Idm: 349A; 26W; WQFN12

Specification