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Manufacturer	NEXPERIA
Type of transistor	N-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	20V
Drain current	2.6A
Pulsed drain current	16A
Case	WLCSP6
Gate-source voltage	±8V
On-state resistance	71mΩ
Mounting	SMD
Gate charge	13nC
Kind of package	reel, tape
Kind of channel	enhancement
Semiconductor structure	common drain
Version	ESD

PMCM650CUNEZ

Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 16A; ESD

Specification

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