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Manufacturer	NEXPERIA
Type of transistor	N-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	20V
Drain current	2.6A
Pulsed drain current	12A
Case	DFN2020-6, HUSON6, SOT1118
Gate-source voltage	±12V
On-state resistance	69mΩ
Mounting	SMD
Gate charge	21.7nC
Kind of package	reel, tape
Kind of channel	enhancement

PMDPB30XNZ

Transistor: N-MOSFET x2; Trench; unipolar; 20V; 2.6A; Idm: 12A

Specification

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