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Manufacturer	NEXPERIA
Type of transistor	N-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	30V
Drain current	2A
Pulsed drain current	12A
Case	DFN2020D-6, SOT1118D
Gate-source voltage	±12V
On-state resistance	121mΩ
Mounting	SMD
Gate charge	5nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMDPB56XNEAX

Transistor: N-MOSFET x2; Trench; unipolar; 30V; 2A; Idm: 12A; ESD

Specification

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