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Manufacturer	NEXPERIA
Type of transistor	N-MOSFET x2
Technology	Trench
Polarisation	unipolar
Drain-source voltage	30V
Drain current	1.7A
Pulsed drain current	11A
Case	DFN2020-6, HUSON6, SOT1118
Gate-source voltage	±12V
On-state resistance	0.17Ω
Mounting	SMD
Gate charge	4.5nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

PMDPB95XNE2X

Transistor: N-MOSFET x2; Trench; unipolar; 30V; 1.7A; Idm: 11A; ESD

Specification

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