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RD3P08BBDTL

Transistor: N-MOSFET; unipolar; 100V; 80A; Idm: 160A; 119W


Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
RD3P08BBDTL
TME Symbol:
RD3P08BBDTL

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Polarisation
unipolar
Drain-source voltage
100V
Drain current
80A
Pulsed drain current
160A
Power dissipation
119W
Case
DPAK, TO252
Gate-source voltage
±20V
On-state resistance
16mΩ
Mounting
SMD
Gate charge
37nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight1 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov

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RD3P08BBDTL
0 in TME stock
Net price for quantities from 2500 pcs - 0.80 USDGross price for quantities from 2500 pcs - 0.80 USD
Net price for quantities from 5000 pcs - 0.76 USDGross price for quantities from 5000 pcs - 0.76 USD
No. of pieces (Multiplicity: 2 500)
Minimum order quantity: 2 500.
Multiplicity: 2 500.
Prices quoted include customs duties and tariffs