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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	55A
Pulsed drain current	312A
Power dissipation	385W
Case	H2PAK7
Gate-source voltage	-10...22V
On-state resistance	27mΩ
Mounting	SMD
Gate charge	79.4nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal

SCT018H65G3AG

Transistor: N-MOSFET; SiC; unipolar; 650V; 55A; Idm: 312A; 385W

Specification