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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	55A
Pulsed drain current	323A
Power dissipation	398W
Case	HIP247-4
Gate-source voltage	-10...22V
On-state resistance	27mΩ
Mounting	THT
Gate charge	77nC
Kind of package	tube
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal
Application	automotive industry

SCT018W65G3-4AG

Transistor: N-MOSFET; SiC; unipolar; 650V; 55A; Idm: 323A; 398W

Specification