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SCT070H120G3AG

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 100A; 223W


Manufacturer: STMicroelectronics

Manufacturer part number:
SCT070H120G3AG
TME Symbol:
SCT070H120G3AG

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
30A
Pulsed drain current
100A
Power dissipation
223W
Case
H2PAK7
Gate-source voltage
-10...22V
On-state resistance
87mΩ
Mounting
SMD
Gate charge
37nC
Kind of package
reel, tape
Kind of channel
enhancement
Features of semiconductor devices
Kelvin terminal
Gross weight1 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: SMD N channel transistors STMicroelectronics,
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SCT070H120G3AG
0 in TME stock
Net price for quantities from 1 pcs - 12.05 USDGross price for quantities from 1 pcs - 12.05 USD
Net price for quantities from 5 pcs - 10.30 USDGross price for quantities from 5 pcs - 10.30 USD
Net price for quantities from 10 pcs - 9.85 USDGross price for quantities from 10 pcs - 9.85 USD
Net price for quantities from 100 pcs - 9.24 USDGross price for quantities from 100 pcs - 9.24 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs