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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	1.2kV
Drain current	12A
Pulsed drain current	24A
Power dissipation	150W
Case	HIP247™
Gate-source voltage	-10...25V
On-state resistance	690mΩ
Mounting	THT
Gate charge	22nC
Kind of package	tube
Kind of channel	enhancement

SCT10N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 12A; Idm: 24A; 150W

Specification