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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	118A
Pulsed drain current	295A
Power dissipation	428W
Case	TO247
Gate-source voltage	-4...22V
On-state resistance	22.1mΩ
Mounting	THT
Gate charge	172nC
Kind of package	tube
Kind of channel	enhancement

SCT3017ALGC11

Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W

Specification