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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	39A
Power dissipation	165W
Case	TO247
On-state resistance	60mΩ
Mounting	THT
Kind of package	tube
Kind of channel	enhancement

SCT3060ALGC11

Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; 165W; TO247

Specification