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SCT3120ALGC11

Transistor: N-MOSFET; SiC; unipolar; 650V; 21A; Idm: 52A; 103W; TO247

Product family

Manufacturer: ROHM SEMICONDUCTOR

Manufacturer part number:
SCT3120ALGC11
TME Symbol:
SCT3120ALGC11

Specification

Manufacturer
ROHM SEMICONDUCTOR
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
650V
Drain current
21A
Pulsed drain current
52A
Power dissipation
103W
Case
TO247
Gate-source voltage
-4...22V
On-state resistance
156mΩ
Mounting
THT
Gate charge
38nC
Kind of package
tube
Kind of channel
enhancement
Gross weight3 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors ROHM SEMICONDUCTOR,
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SCT3120ALGC11
0 in TME stock
Net price for quantities from 1 pcs - 9.51 USDGross price for quantities from 1 pcs - 9.51 USD
Net price for quantities from 3 pcs - 8.85 USDGross price for quantities from 3 pcs - 8.85 USD
Net price for quantities from 6 pcs - 8.16 USDGross price for quantities from 6 pcs - 8.16 USD
Net price for quantities from 12 pcs - 7.80 USDGross price for quantities from 12 pcs - 7.80 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs