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SCT50N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W

Manufacturer: STMicroelectronics

Manufacturer part number:
SCT50N120
TME Symbol:
SCT50N120

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC, SiCFET
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
50A
Pulsed drain current
130A
Power dissipation
318W
Case
HIP247™
Gate-source voltage
-10...25V
On-state resistance
70mΩ
Mounting
THT
Gate charge
122nC
Kind of package
tube
Kind of channel
enhancement
Gross weight4.44 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors STMicroelectronics,
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SCT50N120
48 in TME stock
Net price for quantities from 1 pcs - 28.24 USDGross price for quantities from 1 pcs - 28.24 USD
Net price for quantities from 3 pcs - 27.02 USDGross price for quantities from 3 pcs - 27.02 USD
Net price for quantities from 10 pcs - 25.71 USDGross price for quantities from 10 pcs - 25.71 USD
Net price for quantities from 30 pcs - 25.70 USDGross price for quantities from 30 pcs - 25.70 USD
No. of pieces (Multiplicity: 1)
Product available till the stock lasts
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs