+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

We've added a new feature that allows you to schedule a meeting with a consultant. You can find it at the following link: Book an online meeting.

No surprise tariffs – what You see is what You pay

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	SiC
Polarisation	unipolar
Drain-source voltage	650V
Drain current	100A
Pulsed drain current	280A
Power dissipation	420W
Case	HIP247™
Gate-source voltage	-10...22V
On-state resistance	26mΩ
Mounting	THT
Gate charge	162nC
Kind of package	tube
Kind of channel	enhancement
Application	automotive industry

SCTW100N65G2AG

Transistor: N-MOSFET; SiC; unipolar; 650V; 100A; Idm: 280A; 420W

Specification