SCTW35N65G2V
Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 240W
Manufacturer: STMicroelectronics
Manufacturer part number:
SCTW35N65G2V
TME Symbol:
SCTW35N65G2V
Specification
Manufacturer | STMicroelectronics | |
Type of transistor | N-MOSFET | |
Technology | SiC | |
Polarisation | unipolar | |
Drain-source voltage | 650V | |
Drain current | 45A | |
Pulsed drain current | 90A | |
Power dissipation | 240W | |
Case | HIP247™ | |
Gate-source voltage | -10...22V | |
On-state resistance | 68mΩ | |
Mounting | THT | |
Gate charge | 73nC | |
Kind of package | tube | |
Kind of channel | enhancement |
Gross weight5.38 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors STMicroelectronics,
* SCTW35N65G2VNo. of pieces (Multiplicity: 1)
28 in TME stock
Net price for quantities from 1 pcs - 10.77 USDGross price for quantities from 1 pcs - 10.77 USD
Net price for quantities from 600 pcs - 9.39 USDGross price for quantities from 600 pcs - 9.39 USD
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs