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SCTWA20N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 16A; Idm: 45A; 175W


Manufacturer: STMicroelectronics

Manufacturer part number:
SCTWA20N120
TME Symbol:
SCTWA20N120

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
16A
Pulsed drain current
45A
Power dissipation
175W
Case
HIP247™
Gate-source voltage
-10...22V
On-state resistance
0.22Ω
Mounting
THT
Gate charge
45nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.065 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors STMicroelectronics,
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SCTWA20N120
1 in TME stock
Net price for quantities from 1 pcs - 6.53 USDGross price for quantities from 1 pcs - 6.53 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs