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SCTWA30N120

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 34A; Idm: 90A; 270W


Manufacturer: STMicroelectronics

Manufacturer part number:
SCTWA30N120
TME Symbol:
SCTWA30N120

Specification

Manufacturer
STMicroelectronics
Type of transistor
N-MOSFET
Technology
SiC
Polarisation
unipolar
Drain-source voltage
1.2kV
Drain current
34A
Pulsed drain current
90A
Power dissipation
270W
Case
HIP247™
Gate-source voltage
-10...22V
On-state resistance
0.1Ω
Mounting
THT
Gate charge
105nC
Kind of package
tube
Kind of channel
enhancement
Gross weight6.06 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: THT N channel transistors STMicroelectronics,
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SCTWA30N120
1 in TME stock
Net price for quantities from 1 pcs - 41.80 USDGross price for quantities from 1 pcs - 41.80 USD
Net price for quantities from 3 pcs - 37.64 USDGross price for quantities from 3 pcs - 37.64 USD
Net price for quantities from 10 pcs - 33.23 USDGross price for quantities from 10 pcs - 33.23 USD
Net price for quantities from 30 pcs - 29.88 USDGross price for quantities from 30 pcs - 29.88 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Product available till the stock lasts
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerTube = 30 pcs