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SI5935CDC-T1-GE3

Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -10A

Documentation EN
Documentation EN
Product family

Manufacturer: VISHAY

Manufacturer part number:
SI5935CDC-T1-GE3
TME Symbol:
SI5935CDC-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
P-MOSFET x2
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
-20V
Drain current
-4A
Pulsed drain current
-10A
Power dissipation
2W
Case
ChipFET8
Gate-source voltage
±8V
On-state resistance
156mΩ
Mounting
SMD
Gate charge
11nC
Kind of package
reel, tape
Kind of channel
enhancement
Case - inch
1206
Case - mm
3216
Gross weight0.025 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov

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SI5935CDC-T1-GE3
0 in TME stock
Net price for quantities from 1 pcs - 0.85 USDGross price for quantities from 1 pcs - 0.85 USD
Net price for quantities from 10 pcs - 0.58 USDGross price for quantities from 10 pcs - 0.58 USD
Net price for quantities from 50 pcs - 0.41 USDGross price for quantities from 50 pcs - 0.41 USD
Net price for quantities from 100 pcs - 0.36 USDGross price for quantities from 100 pcs - 0.36 USD
Net price for quantities from 500 pcs - 0.27 USDGross price for quantities from 500 pcs - 0.27 USD
Net price for quantities from 1000 pcs - 0.26 USDGross price for quantities from 1000 pcs - 0.26 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs