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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	100V
Drain current	29.2A
Pulsed drain current	80A
Power dissipation	29W
Case	PowerPAK® SO8
Gate-source voltage	±20V
On-state resistance	21mΩ
Mounting	SMD
Gate charge	27nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7252DP-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 100V; 29.2A; 29W

Specification

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