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SI7288DP-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 20A; Idm: 50A

Documentation EN
Product family

Manufacturer: VISHAY

Manufacturer part number:
SI7288DP-T1-GE3
TME Symbol:
SI7288DP-T1-GE3

Specification

Manufacturer
VISHAY
Type of transistor
N-MOSFET x2
Technology
TrenchFET®
Polarisation
unipolar
Drain-source voltage
40V
Drain current
20A
Pulsed drain current
50A
Power dissipation
15.6W
Case
PowerPAK® SO8
Gate-source voltage
±20V
On-state resistance
22mΩ
Mounting
SMD
Gate charge
15nC
Kind of package
reel, tape
Kind of channel
enhancement
Gross weight0.158 g
Certificates
WarningThis product may expose you to chemicals known by the state of California to cause cancer or reproductive harm, for more information go to www.P65Warnings.ca.gov
See other products in this category: Multi channel transistors VISHAY,
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SI7288DP-T1-GE3
1927 in TME stock
Net price for quantities from 1 pcs - 2.07 USDGross price for quantities from 1 pcs - 2.07 USD
Net price for quantities from 5 pcs - 1.76 USDGross price for quantities from 5 pcs - 1.76 USD
Net price for quantities from 10 pcs - 1.55 USDGross price for quantities from 10 pcs - 1.55 USD
Net price for quantities from 50 pcs - 1.09 USDGross price for quantities from 50 pcs - 1.09 USD
Net price for quantities from 100 pcs - 0.95 USDGross price for quantities from 100 pcs - 0.95 USD
Net price for quantities from 500 pcs - 0.84 USDGross price for quantities from 500 pcs - 0.84 USD
No. of pieces (Multiplicity: 1)
Minimum order quantity: 1.
Multiplicity: 1.
Prices quoted include customs duties and tariffs
Packaging method by the manufacturerReel = 3 000 pcs