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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	60V
Drain current	8A
Pulsed drain current	40A
Power dissipation	22W
Case	PowerPAK® SO8
Gate-source voltage	±20V
On-state resistance	21mΩ
Mounting	SMD
Gate charge	23nC
Kind of package	reel, tape
Kind of channel	enhancement

SI7972DP-T1-GE3

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 8A; Idm: 40A

Specification