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Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-5.4A
Pulsed drain current	-20A
Power dissipation	1.8W
Case	MICROFOOT®
Gate-source voltage	±12V
On-state resistance	82mΩ
Mounting	SMD
Gate charge	27nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8489EDB-T2-E1

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -5.4A; Idm: -20A

Specification