+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

We would like to inform that on September 6, 2026 at 08:00 AM - 11:00 AM (CEST) some problems with access to the website and online orders may occur. We apologize for any inconvenience.

We've added a new feature that allows you to schedule a meeting with a consultant. You can find it at the following link: Book an online meeting.

No surprise tariffs – what You see is what You pay

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	VISHAY
Type of transistor	P-MOSFET
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	-20V
Drain current	-2.9A
Pulsed drain current	-15A
Power dissipation	0.9W
Case	MICROFOOT®
Gate-source voltage	±8V
On-state resistance	0.32Ω
Mounting	SMD
Gate charge	19nC
Kind of package	reel, tape
Kind of channel	enhancement

SI8817DB-T2-E1

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A

Specification