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Manufacturer	VISHAY
Type of transistor	N-MOSFET x2
Technology	TrenchFET®
Polarisation	unipolar
Drain-source voltage	24V
Drain current	11A
Pulsed drain current	40A
Power dissipation	5.7W
Case	MICROFOOT®
Gate-source voltage	±12V
On-state resistance	37mΩ
Mounting	SMD
Kind of package	reel, tape
Kind of channel	enhancement

SI8902AEDB-T2-E1

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A

Specification