+1 500 000 products in offer

7000 packages per day

+300 000 clients from 150 countries

You have questions? Call us 678.691.2347 (Mon-Fri 8:00AM - 6:00PM EDT)

We've added a new feature that allows you to schedule a meeting with a consultant. You can find it at the following link: Book an online meeting.

No surprise tariffs – what You see is what You pay

Here you will find out more

Data processing in progress

Your credit limit has been exceeded. Your order will be accepted but not realized. The delivery schedule will not be set. Please contact a TME employee.

The task was successfully completed.

An unexpected error ocurred. Please try again.

Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	P-MOSFET x2
Polarisation	unipolar
Drain-source voltage	-30V
Drain current	-7A
Pulsed drain current	-28A
Power dissipation	2W
Case	SO8
Gate-source voltage	±20V
On-state resistance	42mΩ
Mounting	SMD
Gate charge	25nC
Kind of package	reel, tape
Kind of channel	enhancement
Version	ESD

SP8J5FRATB

Transistor: P-MOSFET x2; unipolar; -30V; -7A; Idm: -28A; 2W; SO8; ESD

Specification

WATCH VIDEO