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Manufacturer	STMicroelectronics
Type of transistor	IGBT
Collector-emitter voltage	650V
Collector current	120A
Power dissipation	625W
Case	MAX247
Gate-emitter voltage	±20V
Pulsed collector current	360A
Mounting	THT
Gate charge	420nC
Kind of package	tube
Features of semiconductor devices	integrated anti-parallel diode

STGYA120M65DF2

Transistor: IGBT; 650V; 120A; 625W; MAX247

Specification