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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Technology	MDmesh™ DM6
Polarisation	unipolar
Drain-source voltage	650V
Drain current	18A
Pulsed drain current	112A
Power dissipation	223W
Case	H2PAK7
Gate-source voltage	±25V
On-state resistance	0.115Ω
Mounting	SMD
Gate charge	46nC
Kind of package	reel, tape
Kind of channel	enhancement
Features of semiconductor devices	Kelvin terminal
Application	automotive industry

STH30N65DM6-7AG

Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 650V; 18A; Idm: 112A

Specification

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