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Manufacturer	STMicroelectronics
Type of transistor	N-MOSFET
Polarisation	unipolar
Drain-source voltage	600V
Drain current	40A
Pulsed drain current	252A
Power dissipation	390W
Case	TO247
Gate-source voltage	±25V
On-state resistance	41mΩ
Mounting	THT
Gate charge	106nC
Kind of package	tube
Kind of channel	enhancement

STW68N60M6

Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 252A; 390W; TO247

Specification