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Manufacturer	ROHM SEMICONDUCTOR
Type of transistor	N/P-MOSFET
Polarisation	unipolar
Drain-source voltage	20/-20V
Drain current	5.5/-5A
Pulsed drain current	12A
Power dissipation	2W
Case	DFN2020D-8
Gate-source voltage	±8V
On-state resistance	63/76mΩ
Mounting	SMD
Gate charge	4/6.5nC
Kind of package	reel, tape
Kind of channel	enhancement

UT6MA3TCR

Transistor: N/P-MOSFET; unipolar; 20/-20V; 5.5/-5A; Idm: 12A; 2W

Specification

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